| 摘要 |
PROBLEM TO BE SOLVED: To enable to highly accurately execute composition control of a multiple system film while suppressing temperature rise in film forming. SOLUTION: A deposition source 7 is heated with a heater 6 while performing vacuation of the inside of a chamber 1 to perform film forming processing of a semiconductor wafer W by evaporation. At the same time, a sputter gas G1 and a reaction gas G2 are supplied to the chamber 1, and a high-frequency voltage is applied to a target 2. In this way, plasma PZ is generated into the chamber 1, and film forming processing of the semiconductor wafer W is performed by sputtering while performing film forming processing of the wafer W by evaporation. Thus, the multiple system film is formed on the semiconductor wafer W. COPYRIGHT: (C)2007,JPO&INPIT
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