| 摘要 |
PROBLEM TO BE SOLVED: To improve a reliability or performance of semiconductor device by improving a gate insulating film property of semiconductor device having a trench-gate MISFET. SOLUTION: In the manufacturing method of the semiconductor device, ends of a plurality of first groove 3a used for a gate electrode of semiconductor device having the trench-gate MISFET are connected with a second groove 3b; a gate insulating film and gate 17 are formed within the first groove 3a and second groove 3b; and, although a conductor film 4 for gate drawer and the gate 17 are electrically connected in such a way that they are integrally formed by the same conductor film 16, the conductor film 4 for the gate drawer is not formed on a coupling section 40 between the first groove 3a and second groove 3b. COPYRIGHT: (C)2007,JPO&INPIT
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