| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a reliable multilayer wiring structure using an interlayer insulating film with high void ratio. SOLUTION: The multilayer wiring structure comprises a lower wiring layer which has an interlayer film with 50% or more of void ratio, and an upper wiring layer with low void ratio. In the structure, the upper wiring layer with low void ratio having an interlayer film with much thickness is supported by stacked vias 70 which are formed via wiring layers so as to connect the wiring layers perpendicularly, and continuously to the substrate surface and by a perimeter ring 80 provided in a chip peripheral part. COPYRIGHT: (C)2007,JPO&INPIT
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