发明名称 SEMICONDUCTOR DEVICE AND CUTTING METHOD OF FUSE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a semiconductor element can be arranged below a fuse which is cut by laser. SOLUTION: The semiconductor device comprises an impurity region 7a for discharging which is formed in a semiconductor substrate 1, first insulation film 8 formed on or above the semiconductor substrate 1, conductive film 10c for light shielding which is formed on the first insulation film 8, grounding interconnection 9 for grounding the conductive film 10c for light shielding to the impurity region 7a, second insulation film 11 formed on or above the first insulation film 8 and the conductive film 10c for light shielding, and the fuse 13 which is formed on the second insulation film 11 and is arranged above the conductive film 11 for light shielding. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007066983(A) 申请公布日期 2007.03.15
申请号 JP20050247867 申请日期 2005.08.29
申请人 SEIKO EPSON CORP 发明人 ITOMI NOBORU
分类号 H01L21/82;H01L21/3205;H01L23/52 主分类号 H01L21/82
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