NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory element which occupies a small area and allows rewriting of data many times and has a superior data retention property.

SOLUTION: The nonvolatile semiconductor memory element which stores data by holding electric charge in a floating gate 18 includes a MOS transistor 13 having the floating gate 18, and a capacitor C consisting of a metal layer with one end of the capacitor C connected to the floating gate 18. In the nonvolatile semiconductor memory element of this structure by applying positive high voltage to a control gate 17, a writing operation is conducted in the MOS transistor 13 by FN tunneling; and by applying negative high voltage to the control gate 17, an erasing operation is conducted in the MOS transistor 13 by FN tunneling.

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