| 摘要 |
The present invention provides a method for fabricating an organic thin film transistor (OTFT) device where a vertical contact hole is produced in the insulating layer and the passivation layer thereof, so that the respective devices located below and above the OTFT would be electrically connected with each other. The provided OTFT device includes a substrate, a gate layer located on the substrate, an insulating layer located on the gate layer, an electrode layer located on the insulating layer and having a source region and a drain region, an organic semiconductor layer located between the source region and the drain region, a passivation layer patterned and located on the source region, the drain region and the organic semiconductor layer, and a contact hole passing through the passivation layer to one of the source region and the drain region.
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