| 摘要 |
The nonvolatile semiconductor memory device according the this invention has a plurality of memory cells arranged in a matrix form and each having a floating gate; at least one first diode connected between drains of said plurality of memory cells and a ground terminal; and at least one second diode connected between sources of said plurality of memory cells and said ground terminal, wherein said first diode and said second diode have a same temperature characteristic. Said first diode and said second diode may be of parasitic diodes, Zener diodes or devices with avalanche breakdown voltages.
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