发明名称 Semiconductor device having fuse circuits
摘要 Provided is a semiconductor device including a plurality of fuse circuits. Each of the fuse circuits includes: a first signal generator generating a first signal to a first node in response to a power-up signal; a pull-down transistor pulling down a second node in response to the first signal; a pull-up transistor and a fuse which are connected in series between a power supply voltage and the second node and pulling up the second node in response to the first signal when the fuse is not cut; a buffer buffering a signal output from the second node and generating a control signal; and a standby reset transistor resetting the second node in response to the control signal output from the buffer, wherein the pull-down transistor and the standby reset transistor have threshold voltages lower than a threshold voltage of the buffer. Also, each of the fuse circuits further includes an active reset transistor resetting the second node in the active mode in response to the reset control signal. Accordingly, the semiconductor device can reduce an undesired leakage current when the fuse is not cut, and also prevent change in the state of the control signal when the fuse is cut.
申请公布号 US2007058316(A1) 申请公布日期 2007.03.15
申请号 US20060495296 申请日期 2006.07.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM JONG-HYOUNG;KANG SANG-SEOK;JEONG YONG-HWAN;BYUN SANG-MAN
分类号 H02H5/04 主分类号 H02H5/04
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