| 摘要 |
A semiconductor structure and method for manufacturing the same is disclosed. The present invention relates to a semiconductor having a dielectric layer applied on a gate of a transistor, and a high dielectric-coefficient, and a manufacturing method of the semiconductor. Ti is formed on HfO<SUB>2 </SUB>to absorb oxygen from the dielectric layer to reduce its thickness, and even make it disappear. However, the TiO<SUB>2 </SUB>grown on the layer of Ti advances the growing of HfO<SUB>2</SUB>. Simultaneously, the dielectric constant of TiO<SUB>2 </SUB>is about 50. The TiO<SUB>2 </SUB>substantially enhances the dielectric constant for the dielectric layer. Ti absorbs the oxygen to reduce its thickness and increase the dielectric constant to reduce EOT. Moreover, TiO<SUB>2 </SUB>is formed and the dielectric constant is increased after heating. Accordingly, leakage is avoided in the TiO<SUB>2</SUB>. The present invention enhances the applications for high-k gate dielectrics with high electric constants, and continuously reduces the EOT.
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