发明名称 |
Embedded flash memory devices on SOI substrates and methods of manufacture thereof |
摘要 |
Flash memory device structures and methods of manufacture thereof are disclosed. The flash memory devices are manufactured on silicon-on-insulator (SOI) substrates. Shallow trench isolation (STI) regions and the buried oxide layer of the SOI substrate are used to isolate adjacent devices from one another. The methods of manufacture require fewer lithography masks and may be implemented in stand-alone flash memory devices, embedded flash memory devices, and system on a chip (SoC) flash memory devices.
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申请公布号 |
US2007057307(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20050223235 |
申请日期 |
2005.09.09 |
申请人 |
SHUM DANNY P;TILKE ARMIN;YAN JIANG |
发明人 |
SHUM DANNY P.;TILKE ARMIN;YAN JIANG |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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