WASHING AGENT FOR PHOTOLITHOGRAPHY AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME

摘要

[PROBLEMS] To provide a washing agent for photolithography that is capable of easily and efficiently removing any coating (protective film) of fluorinated polymer at low cost, permitting recycled use; and provide a method of forming a photoresist pattern with the use of the washing agent. [MEANS FOR SOLVING PROBLEMS] There is provided a washing agent for photolithography comprising (A) heterocyclic compound having at least one oxygen atom as a ring constituting atom and/or (B) C<SUB>4</SUB>-C<SUB>10</SUB> fluorinated hydrocarbon having its hydrogen atoms partially or wholly replaced by fluorine atoms. Further, there is provided a recycled washing agent obtained through recovery of the above washing agent after use and purification. Still further, there is provided a method of forming a photoresist pattern with the use of these washing agents.