| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of shaping a phase-change layer in a phase change memory cell. <P>SOLUTION: The phase-change memory cell includes a phase-change layer, formed of a phase-change material on a semiconductor body. A hard mask structure is formed on the phase-change layer and a resist mask is formed on the hard mask structure. A hard mask is formed, by shaping the hard mask structure by using the resist mask. The phase-change layer is shaped using the hard mask. The resist mask is removed, before the phase-change layer is shaped. <P>COPYRIGHT: (C)2007,JPO&INPIT |
