| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing parasitic transistor operation by reducing a device size, and also to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device, for example, a MOS transistor has a structure that a p-type diffusing layer 5 as a back gate region and an n-type diffusing layer 8 as a drain region are formed on an n-type epitaxial layer 4. On the p-type diffusing layer 5, an n-type diffusing layer 7 as a source region and a p-type diffusing layer 6 are formed. The p-type diffusing layer 6 is formed by the ion implantation step of two times conforming to the shape of a contact hole 15 and an impurity concentration at a surface area, and a deep area thereof is adjusted. By this structure, a device size is reduced and parasitic npn transistor operation is controlled. COPYRIGHT: (C)2007,JPO&INPIT |
