| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the diffusion of impurities into an active layer. SOLUTION: The laser diode comprises an n-type GaN buffer layer 2 formed on an n-type GaN substrate 1, an n-type clad layer 3 formed on the n-type GaN buffer layer 2, an n-type guide layer 4 formed on the n-type clad layer 3, the active layer 5 formed on the n-type guide layer 4, a p-type first guide layer 6 formed on the active layer 5, an overflow prevention layer 7 formed on the p-type first guide layer 6, an impurity diffusion prevention layer 8 formed on the overflow prevention layer 7, a p-type GaN second guide layer 9 formed on the impurity diffusion prevention layer 8, and a p-type clad layer 10 formed on the p-type GaN second guide layer 9. Since the impurity diffusion prevention layer 8 composed of In<SB>y</SB>Ga<SB>1-y</SB>N is formed in proximity to the active layer 5; p-type impurities existing in the p-type clad layer 10, the p-type second guide layer 9, etc. can be accumulated in the impurity diffusion prevention layer 8, thereby preventing the diffusion of the p-type impurities into the active layer 5. COPYRIGHT: (C)2007,JPO&INPIT |
