SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can further improve practical upper limit temperature, and to provide its manufacturing method. SOLUTION: An ONO insulating film 9 having a 3-layer structure of a silicon oxide film 10, an SiN film 11 and an SiN thermal oxide film 12 is pinched between an SiC epitaxial substrate 1 wherein a field insulating film 3 with a gate window 6 opened is formed on its surface and a gate electrode 7 made of polycrystal silicon, so as to cover the bottom of the gate window 6. N is included in the inside of the silicon oxide film 10 adjacent to the SiC epitaxial substrate 1 and a boundary between the silicon oxide film 10 and the SiC epitaxial substrate 1. COPYRIGHT: (C)2007,JPO&INPIT