| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of preventing hydrogen a water content or the like from entering a ferroelectric capacitor from around the device including a contact plug. SOLUTION: The semiconductor device comprises a ferroelectric capacitor above a semiconductor substrate and containing a lower electrode, a ferroelectric film, and an upper electrode; an insulating film formed to cover the ferroelectric capacitor; a contact plug that is provided in an insulating film, and connected to the upper electrode; a first hydrogen barrier film which continuously covers the side of the contact plug; a second hydrogen barrier film formed on the insulating film; and wiring connected to the contact plug. COPYRIGHT: (C)2007,JPO&INPIT
|
