| 摘要 |
PROBLEM TO BE SOLVED: To solve a matter that the impact of variation in fabrication of elements has increased as scaling down progresses and since the impact is especially significant when paired transistors (pair transistor) are used, a processing technology of higher precision is required. SOLUTION: In the process for fabricating a semiconductor device, the gate electrode of a first transistor group including a pair transistor is formed by performing first etching on a gate electrode layer, and the gate electrode of a second transistor group is formed by performing second etching different from the first etching on the gate electrode layer. With such a process, characteristics of pair transistors can be arranged. COPYRIGHT: (C)2007,JPO&INPIT
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