| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method, by which a transition state in reactive sputtering can be stably maintained for a long time. SOLUTION: In a magnetron sputtering system, the transition sputtering is performed by supplying an inert gas and a reactive gas in respective desired flow rates into a vacuum chamber while adjusting the variation with time of discharge electric power or discharge admittance to be within±10% and controlling the voltage of a sputter electric source. Further, the maximum magnetic field intensity of the surface of a target is adjusted to be 0.03-0.1 tesla so as to stabilize the discharge electric power or the discharge admittance for a long time. COPYRIGHT: (C)2007,JPO&INPIT
|
