发明名称 |
Methods of forming patterns and capacitors for semiconductor devices using the same |
摘要 |
A semiconductor structure may be formed by a wet etching process using an etchant containing water. The semiconductor structure may include a plurality of patterns having an increased or higher aspect ratio and may be arranged closer to one another. A dry cleaning process may be performed using hydrogen fluoride gas on the semiconductor structure.
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申请公布号 |
US2007059941(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20060455815 |
申请日期 |
2006.06.20 |
申请人 |
PARK CHEOL-WOO;YOON BYOUNG-MOON;KO YONG-SUN;KIM KYUNG-HYUN;LEE KWANG-WOOK |
发明人 |
PARK CHEOL-WOO;YOON BYOUNG-MOON;KO YONG-SUN;KIM KYUNG-HYUN;LEE KWANG-WOOK |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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