ONE-TO-ONE X-RAY EXPOSURE METHOD AND ONE-TO-ONE X-RAY EXPOSURE APPARATUS

摘要

A one-to-one mask (12) on which a plurality of identical patterns (11) are so formed as to be vertically aligned is used to apply X-rays (10) to one of the patterns on the one-to-one mask. The X-rays passing through the pattern on the one-to-one mask (12) are applied to a wafer (15) secured to a wafer stage (14) to perform a pattern exposure. The one-to-one mask (12) is secured to a mask stage (13) capable of horizontal reciprocating motion within the wafer stage (14) capable of vertical reciprocating motion within a vertical stage (16). In order to perform the pattern exposure of the entire surface of the wafer (15), while the X-rays (10) are being applied to the top of the patterns (11) on the one-to-one mask (12), both the one-to-one mask (12) and the wafer (15) are moved upward by the vertical stage (16). By this way, the X-rays (10) are applied to all of the vertically aligned patterns (11), and the pattern exposure is consequently performed on one vertical column in the wafer (15).