SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To secure an insulation of a through electrode. SOLUTION: A device forming layer 18 is formed on the upper surface of a semiconductor element 14 of a semiconductor device 50, and a passivation layer 26 is laminated on the surface of the layer 18. The layer 18 and a plurality of Al electrode pads 20 are formed on the upper surface of the element 14 through an upper surface side insulating layer 60. A cylindrical insulating layer 63 is formed on an inner periphery of a through hole 54 penetrating through the element 14, and the through electrode 56 is filled within the layer 63. The Al electrode pads 20 are arranged at the position distant from the outer periphery of the layer 63 in the predetermined distance, and provided in no contact with the layer 63. The part between the Al electrode pads 20 and the upper end part of the through electrode 56 is connected by the planar electrode 66 laminated from the upper surface side to the upper end part of the through electrode 56. The electrode 66 is formed so as to cover the Al electrode pads 20 centering around the end part of the through electrode 56. COPYRIGHT: (C)2007,JPO&INPIT