| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of surely detecting a memory cell causing an unstable operation due to insufficient memory cell current. <P>SOLUTION: A bit-line driving circuit 25a is arranged for each bit-line pair BLm, NBLm, and is configured to reduce one potential selected from those of the bit-line pair BLm, NBLm. In a test operation, a potential difference between the bit-line pair BLm, NBLm is reduced by grounding the bit-line BLm conducting to an H-side memory holding node of a memory cell Mn_m. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
