| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, capable of enhancing coupling degree between inductors with improved yield. <P>SOLUTION: Two semiconductor chips 1 and 2 are so stacked as their main surfaces face each other. Two inductors 16 and 41 are so aligned as to face each other across a narrow interval. The part of an SOI layer 34 of the semiconductor chip 2 that is positioned above the inductor 41 is removed by etching. By wet etching, only a silicon bulk substrate is removed by etching at high selectivity without removing an embedded oxide film 33 in the lower layer of the silicon bulk substrate of the semiconductor chip 2. <P>COPYRIGHT: (C)2007,JPO&INPIT |
