Semiconductor laser device and method of manufacturing the same

摘要

A semiconductor laser device in which a red semiconductor laser device and an infrared semiconductor laser device are located on a single substrate, and an end-face window structure is formed simultaneously. The hydrogen concentration (1.5e¹⁸ cm^-3) of a fourth clad layer ( 110 ) of the infrared semiconductor laser device is higher than the hydrogen concentration (1e¹⁸ cm^-3) of a second clad layer ( 105 ) of the red semiconductor laser device which is a first semiconductor laser device, whereby an active layer of the infrared semiconductor laser device can be sufficiently disordered in the semiconductor laser device.