发明名称 METHOD FOR FORMING A CAPACITOR
摘要 In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.
申请公布号 US2007059648(A1) 申请公布日期 2007.03.15
申请号 US20060594073 申请日期 2006.11.08
申请人 发明人 BAIK IHN-GEE
分类号 G03F7/20 主分类号 G03F7/20
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