| 发明名称 |
SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE |
| 摘要 |
A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
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| 申请公布号 |
US2007059894(A1) |
申请公布日期 |
2007.03.15 |
| 申请号 |
US20050905587 |
申请日期 |
2005.09.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAKRAVARTI ASHIMA B.;CHOU ANTHONY I.;FURUKAWA TOSHIHARU;HOLMES STEVEN J.;NATZLE WESLEY C. |
| 分类号 |
H01L21/336;H01L21/20;H01L21/44 |
主分类号 |
H01L21/336 |
| 代理机构 |
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| 主权项 |
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