| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MSM current limiting element, and a method for manufacturing a resistive memory cell having the MSM current limiting element. <P>SOLUTION: This method comprises a step for preparing a substrate, a step for forming an MSM lower electrode on the substrate, a step for forming a ZnOx semiconductor layer wherein x is within a range of about 1 to about 2 on the MSM lower electrode, and a step for forming an MSM upper electrode on the ZnOx semiconductor layer. This ZnOx semiconductor layer is formed by using various thin film forming techniques such as a spin coat method, a DC sputtering method, an RF sputtering method, a metal organic vapor phase deposition (MOCVD) or an atomic layer deposition (ALD). <P>COPYRIGHT: (C)2007,JPO&INPIT |
