| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a system for photolithography in semiconductor manufacture combining an advantage of high accuracy which high accuracy exposure has and an advantage of low cost which low accuracy exposure has, and to provide a method for it. <P>SOLUTION: In a step 14, a wafer is prepared. In a step 16, at least one exposure is performed for the wafer by liquid immersion lithography. Further in a step 18, at least one exposure is performed for the wafer by dry lithography. <P>COPYRIGHT: (C)2007,JPO&INPIT |
