发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress a power supply noise with a small chip area of a CMOS LSI maintained. SOLUTION: A semiconductor device having a CMOS primitive cell comprises an element layer including the CMOS primitive cell, and an interconnection layer provided on the element layer. The interconnection layer comprises a first power supply wiring 40 connected to the CMOS primitive cell and having a first power supply potential VDD, and a first ground wiring 50 connected to the CMOS primitive cell and having a first ground potential GND. The element layer comprises a first decoupling capacitor DC3 provided beneath the wiring 40, and a second decoupling capacitor DC4 provided beneath the wiring 50. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007067207(A) 申请公布日期 2007.03.15
申请号 JP20050252002 申请日期 2005.08.31
申请人 NEC ELECTRONICS CORP 发明人 AOKI YASUSHI
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L21/8238;H01L27/04;H01L27/06;H01L27/092;H01L27/118 主分类号 H01L21/822
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