| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral double-diffusion field effect transistor having a high withstanding voltage and a low ON-resistance. SOLUTION: The gate insulating film of the field effect transistor includes first and second gate insulating films 4b, 4a. The first gate insulating film 4b covers the region ranging from a source diffusion layer 6 to the region extended beyond the pattern of a body diffusion layer 3. The thickness of the second gate insulating film 4a is larger than the one of the first gate insulating 4b, and covers the region ranging from the region covered with the first gate insulating film 4b to the approximate region to a drain diffusion layer 7. A boundary line 13 between the first and second gate insulating films 4b, 4a comprises straight portions 13n parallel with the sides of the pattern of the body diffusion layer 3 and corners 13r surrounding the vertexes of the pattern of the body diffusion layer 3 apart from them. The distance between each vertex of the pattern of the body diffusion layer 3 and each corner 13r of the boundary line 13 is not larger than a distance X between each side of the pattern of the body diffusion layer 3 and each straight portion 13n of the boundary line 13. COPYRIGHT: (C)2007,JPO&INPIT
|
