| 摘要 |
PROBLEM TO BE SOLVED: To realize a phase reaction processing apparatus which can substantially uniformly process the entire surface of a semiconductor wafer and is suitable for processing of a large-diameter substrate wafer. SOLUTION: The phase reaction processing apparatus 25 includes a processing chamber 14 for introducing a reaction gas thereinto; a substrate material 3 to be arranged in the processing chamber 14 and processed; catalysts 9 for decomposing the reaction gas introduced into the processing chamber 14; a power source device 10 for supplying power to the catalysts 9; and an electrode structure 15 having the catalyst 9. The electrode structure 15 has a plurality of catalysts 9 arranged in substantially parallel to each other; a first terminal group 7 including a plurality terminals oppositely arranged with the catalysts 9 sandwiched and each supporting one ends of the catalysts 9; a second terminal group 8 including a plurality terminals supporting the other ends of the catalysts 9; and a terminal base 6 for supporting the first and second terminal groups 7 and 8 so that they are electrically insulated. COPYRIGHT: (C)2007,JPO&INPIT
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