| 摘要 |
PROBLEM TO BE SOLVED: To make a semiconductor device fine and small in size, to provide a semiconductor device capable of suppressing a variation in the threshold voltage of each memory cell transistor and its manufacturing method, and further to provide the semiconductor device having a high reliability tunnel insulating film and its manufacturing method. SOLUTION: The semiconductor device comprises a semiconductor substrate 100; a plurality of assist gates 102c to 102e formed on the principal surface of the semiconductor substrate 100 via a first insulating film 101, and capable of forming an inverted layer in the semiconductor substrate 100; a second insulating film 105 formed on side surfaces of the assist gates 102c to 102e; a plurality of side wall-shaped floating gates 107c5 to 107c10 formed on the principal surface of the semiconductor substrate 100 via a third insulating film 106 extending on the second insulating film 105, and capable of storing electric charges; and a plurality of control gates 117c formed on the floating gates 107c5 to 107c10 via a fourth insulating film 112. COPYRIGHT: (C)2007,JPO&INPIT
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