| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus, wherein the increase of the apparatus manufacturing cost is suppressed and a single crystal almost free from crystal defects is obtained by easily forming thermal environments being high in degree of freedom according to the kinds or sections of single crystals to be grown, and a method for controlling the same. SOLUTION: The single crystal pulling apparatus 1 for pulling the single crystal C from a crucible 3 by a Czochralski method is equipped with: a pulling means 5 for pulling the single crystal C; a cylindrical cooling tube 2b for surrounding the periphery of the single crystal C being pulled by the pulling means 5 through a vacant space and cooling the single crystal C; a cylindrical heat insulating member 20 which is provided in the vacant space formed between the single crystal C and the cooling tube 2b and surrounds the periphery of the single crystal C; and an ascending/descending means for ascending and descending the heat insulating member 20 with respect to the single crystal C. COPYRIGHT: (C)2007,JPO&INPIT
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