发明名称 |
Semiconductor device and method of manufacturing the same, and semiconductor substrate and method of manufacturing the same |
摘要 |
A method of manufacturing a semiconductor device including a substrate; an insulating film formed thereon; a first semiconductor layer where strain is induced in the directions parallel to the surface of the substrate, the first semiconductor layer being on the insulating film; a source region and a drain region formed in the first semiconductor layer; and a gate layered body formed of a gate insulating film and a gate electrode on the first semiconductor layer is disclosed. The method includes the steps of (a) forming a second semiconductor layer by epitaxial growth on the first semiconductor layer; (b) heating the second semiconductor layer; and (c) removing the second semiconductor layer. The second semiconductor layer is different in lattice constant in an in-plane direction from the first semiconductor layer. Step (b) induces the strain in the first semiconductor layer by exposing the surface of the second semiconductor layer to energy lines.
|
申请公布号 |
US2007059875(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20060585804 |
申请日期 |
2006.10.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
MISHIMA YASUYOSHI |
分类号 |
H01L21/8238;H01L21/20;H01L21/265;H01L21/336;H01L21/84;H01L27/08;H01L27/088;H01L27/092;H01L27/12;H01L29/786 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|