Method of forming metal silicide layer and related method of fabricating semiconductor devices

摘要

A method of forming a composite metal silicide layer is disclosed in which a PVD-metal layer is deposited on a silicon layer using a Physical Vapor Deposition (PVD) process, and is substantially simultaneously silicidated to form a PVD-metal silicide layer. Un-reacted portions of the PVD-metal layer are then removed and a CVD-metal layer is formed on the PVD-metal silicide layer using a Chemical Vapor Deposition (CVD) process. A first heat treatment is performed to silicidate a portion of the CVD-metal layer contacting the PVD-metal silicide layer and thereby form a composite metal silicide layer. Un-reacted residual portions of the CVD-metal layer are removed and a second heat treatment is performed on the composite metal silicide layer at a higher temperature than the first heat treatment.