发明名称 |
Method of controlling impurity doping and impurity doping apparatus |
摘要 |
Disclosed here is a method of controlling a dose amount of dopant to be doped into object ( 1 ) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object ( 1 ), the amount of ions having dopant in plasma that collide with object ( 1 ), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object ( 1 ), and a dose amount by ions from the determined amount of ions containing dopant that collide with object ( 1 ); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
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申请公布号 |
US2007059848(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20040570787 |
申请日期 |
2004.09.06 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SASAKI YUICHIRO;NAKAYAMA ICHIRO;OKUMURA TOMOHIRO;MAESHIMA SATOSHI |
分类号 |
H01L21/66;H01L21/00;H01L21/04;H01L21/26;H01L21/265 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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