| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to reduce the resistance of a gate electrode and to stabilize transistor characteristics by using an improved barrier layer. A semiconductor device comprises a semiconductor substrate(10), a plurality of gate electrodes, barrier insulators and an interlayer dielectric. The plurality of gate electrodes are composed of a charge storing layer made of a first insulator, a first conductor layer, a second conductor layer and a second insulator(36) between the charge storing layer and the first conductor layer. The barrier insulators(38) are installed between adjacent gate electrodes. The barrier insulators contacts sidewalls alone of the gate electrodes. The interlayer dielectric is formed on the resultant structure to contact an upper surface of the second conductor layer. The barrier insulator includes a silicon nitride layer.</p> |
