METHOD FOR FABRICATION OF IMAGE SENSOR FOR PREVENTING GENERATION OF DARK CURRENT

摘要

A method for manufacturing an image sensor is provided to restrain the generation of a dark current by using an improved channel stop region with a boron concentration. A trench is formed on a substrate(200). A boron doped oxide layer is formed along an inner surface of the trench. A boron ion implantation process is performed on a bottom portion of the trench. A planarized field oxide layer(206) is filled in the trench. A photodiode is formed adjacent to the field oxide layer in the substrate. The thickness of the oxide layer is in a range of 300 to 1000 angstroms. The oxide layer is formed in a temperature range of 400 to 500 deg.C. The dose of the boron ion implantation is in a temperature range of 1.0E12 to 5.0E13 atoms/cm^2.