| 摘要 |
A transistor manufacturing method and a device manufacturing method are provided to simplify manufacturing processes by forming simultaneously a constituent element and a peripheral portion of a memory cell array. An insulating trench for defining an active region is formed on a semiconductor substrate(1). First and second source/drain regions(121,122) and a channel region for connecting the first and the second source regions with the first and the second drain regions are formed in the active region. A gate electrode for controlling the conductivity of the channel is formed on the resultant structure. The gate electrode is formed on a portion of the insulating trench adjacent to a groove of the substrate. |
