发明名称 METHOD OF INSPECTING AN ANISOTROPIC ETCH IN A MICROSTRUCTURE
摘要 A method is disclosed for evaluating an anisotropic etch in a microstructure. First a film is formed on a substrate. Next a series of holes of progressively different area and having specific geometric shapes are formed through the film. An anisotropic etch is carried out in the microstructure through the holes by relying on different etch rates in different crystal planes under known and reproducible conditions. Finally, the microstructure is inspected through the holes after the anisotropic etch to compare results from holes of different area. The method is useful in the determination of etch depth.
申请公布号 EP1340251(B1) 申请公布日期 2007.03.14
申请号 EP20010996882 申请日期 2001.11.15
申请人 DALSA SEMICONDUCTOR INC. 发明人 ANTAKI, ROBERT;YAN, RIOPEL
分类号 H01L21/66 主分类号 H01L21/66
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