发明名称 |
CROSS-POINT FERROELECTRIC MEMORY THAT REDUCES THE EFFECTS OF BIT LINE TO WORD LINE SHORTS |
摘要 |
A memory constructed from a dielectric layer sandwiched between a plurality of word conductors 4nd a plurality of bit line conductors is disclosed. The dielectric layer includes a layer of ferroelectfic material, and has first and second surfaces. The word conductors are located on the first surface. Each word conductor is connected to a corresponding word line driving circuit. The bit line 4onductors are located on the second surface. Each bit line conductor is connected to a corresponding bit line driving circuit and a corresponding sense amplifier by one or more disconnect switches. A disconnect switch is set to an open state if the bit line conductor connected tol that disconnect switch is shorted to one of the word conductors. ® KIPO & WIPO 2007
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申请公布号 |
KR20070029831(A) |
申请公布日期 |
2007.03.14 |
申请号 |
KR20077002353 |
申请日期 |
2007.01.30 |
申请人 |
THIN FILM ELECTRONICS ASA |
发明人 |
WOMACK RICHARD HIRAM |
分类号 |
G11C11/22;G11C7/06;G11C7/18;G11C8/14 |
主分类号 |
G11C11/22 |
代理机构 |
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地址 |
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