| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a plasma treating fault from occurring by stopping the plasma process when an abnormal discharge occurs. <P>SOLUTION: The apparatus 23 for plasma treating a semiconductor wafer 5 which places a wafer stage 27 comprises a treating gas introducing means 3, a vacuum chamber 2 having the wafer stage 27 for placing an exhaust means 6 and a semiconductor wafer, and a plasma generating means 1 for generating a plasma in the chamber 2 by supplying a high-frequency power into the chamber 2. The apparatus 23 further comprises a sensor 9 for electrically or optically measuring the state amount of the apparatus to detect the abnormal plasma discharge based on the differentiated value 17 of the output of the sensor. <P>COPYRIGHT: (C)2003,JPO |
