| 摘要 |
<p>981,270. Semi-conductor devices. GENERAL INSTRUMENT CORPORATION. June 28, 1963 [July 27, 1962], No. 25754/63. Heading H1K. In a controlled power rectifier comprising a semi-conductor body having three successive layers of which the second layer 32 is of opposite conductivity type to the first and third layers 36 and 34, respectively, a first terminal 14, Fig. 1 (not shown), is connected to the first layer 36, a region 38 of opposite conductivity type is provided in the third layer 34 and extends to a portion of the outer surface of the third layer, a second terminal 22 is connected to the region 38, a gate terminal 24 is connected to a part 40 of the outer surface of the third layer 34 not occupied by the region 38, and the outer surface of the third layer 34 is metal plated (at 42 and 46, Fig. 4, or 60 and 62, Fig. 5) with a gap 50, Fig. 4, or 64, 64<SP>1</SP>, Fig. 5, in the metal plating, the gap lying mainly over the junction 52 between the region 38 and the part 40 but departing from it at one point so that the metal plating at 66 is carried over the junction to form a resistive connection between the region 38 and the third layer 34.</p> |
