| 摘要 |
A plasma generation apparatus for generating a radical is provided to prevent a thin film of a PECVD(Plasma Enhanced Chemical Vapor Deposition) device from being damaged due to an ion impact by filtering a high energy ion. A plasma generation apparatus for generating a radical includes a chamber(110), a substrate installation unit(120), an RF electrode(130), a first RF power unit(170), a first matcher(174), an insulation plate(150), a ground electrode(160), and a gas supply unit(180). The chamber(110) defines a reaction region. The substrate installation unit(120) is installed on the inside of the chamber(110). The RF electrode(130) is installed on an upper part of the substrate installation unit(120), and is insulated from the chamber(110). The first RF power unit(170) is connected to the RF electrode(130). The first matcher(174) matches an impedance between the first RF power unit(170) and the RF electrode(130). The insulation plate(150) is installed between the RF electrode(130) and the substrate installation unit(120). The conductive ground electrode(160) is installed on an upper part of the insulation plate(150), and has a plurality of second penetration units connected to a first penetration unit. The gas supply unit(180) provides a fuel material to an upper part of the ground electrode(160). |
