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发明名称
method for implanting dopants in a substrate of semiconductor fabrication and method for forming a semiconductor device using the same
摘要
申请公布号
KR100691002(B1)
申请公布日期
2007.03.09
申请号
KR20030095549
申请日期
2003.12.23
申请人
发明人
分类号
H01L21/265;H01L21/336;H01L21/8238
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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