发明名称 LOW-POWER MULTI-LEVEL PULSE AMPLITUDE MODULATION DRIVE AND SEMICONDUCTOR DEVICE HAVING THE DRIVER
摘要 A low-power multi-level PAM(Pulse Amplitude Modulation) driver and a semiconductor device having the same are provided to reduce power consumption of the multi-level PAM driver by selectively turning on/off a current source used in the multi-level PAM drive. A low-power multi-level PAM driver includes load units(R1,R2), a first current source(411), a second current source(421), a couple of first input transistors(T2), a couple of second input transistors(T4), and a current source control unit(430). The load units(R1,R2) are electrically connected to an output node. The first current source(411) provides a first current quantity to the load units(R1,R2). The second current source(421) provides a second current quantity to the load units(R1,R2). The couple of first input transistors(T2) are electrically connected to the first current source(411) and the load units(R1,R2) in response to a first bit signal. The couple of second input transistors(T4) are electrically connected to the second current source(421) and the load units(R1,R2) in response to a second bit signal. The current source control unit(430) controls on/off of one of the first current source and the second current source in response to the second bit signal and the first bit signal.
申请公布号 KR20070027160(A) 申请公布日期 2007.03.09
申请号 KR20050082495 申请日期 2005.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SUNG, KI HYUK;KIM, CHI WON
分类号 H03K19/0175;H03K19/00 主分类号 H03K19/0175
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