| 摘要 |
A method of purging a semiconductor manufacturing apparatus comprises a step of etching a CVD-deposited film deposited in a chamber (2) constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer (12) by using an etching gas containing at least a halogen gas, and a step of purging a cleaning gas remaining in the chamber (2) by causing a gas containing hydrogen to flow into the chamber (2) after the step of etching the CVD-deposited film by using the cleaning gas. <IMAGE> |
