| 摘要 |
<p>A solid-state imaging device, comprising: a semiconductor substrate (101) having a first surface; a solid-state imaging element (102) in the first surface of semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member (201) having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap (C) between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal (BP) connected to the solid-state imaging element, wherein the light-transmission member comprises low ±-ray glass.</p> |
