METHOD FOR PREVENTING COPPER DIFFUSION ON PROCESS FOR FORMING PAD IN COPPER METAL LINE SEMICONDUCTOR DEVICE

摘要

A method is provided to prevent the diffusion of a copper component in a pad forming process of a copper line semiconductor device by changing characteristics of TiSiN using an SiH4 concentration reducing process. A copper line layer is formed on a semiconductor substrate. A passivation layer is formed on the entire surface of the copper line layer. The copper line layer is selectively exposed to the outside by patterning the passivation layer. A barrier metal is formed on the exposed copper line layer. A metal film for wire-bonding is formed on the barrier metal. The barrier metal is obtained by depositing a TiN layer on the exposed copper metal layer and soaking properly SiH4 into the TiN layer without a semi-pump process.