| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to prevent the malfunction of the sensor itself by restraining the generation of crosstalk between adjacent pixels using an improved light shielding layer structure capable of exposing a photodiode region alone to the outside. A CMOS image sensor includes a semiconductor substrate(100) having a pixel region and a peripheral region, transistors on the pixel and peripheral regions, a photodiode(130) at one side of the transistor in the substrate of the pixel region, an interlayer dielectric on the substrate including transistors, a lower electrode(160a) of a MIM(Metal Insulator Metal) capacitor on the interlayer dielectric corresponding to the peripheral region, and a light shielding layer(160b) on the interlayer dielectric corresponding to the pixel region. The light shielding layer is capable of exposing the photodiode to the outside.
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